首页> 外文OA文献 >Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport.
【2h】

Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport.

机译:多管物理气相传输生长的掺氧单晶ZnTe的结构和光学性质。

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical Vapour Transport technique and doped, in-situ during growth, with oxygen. Following hetero-epitaxial nucleation and buffer growth on 100 mm diameter GaAs seed wafers, oxygen was introduced to the quartz growth envelope, using nitrous oxide as a precursor, via a novel gas injection system. Mass spectra from a residual gas analyser sampling the gases exiting the growth envelope indicated that the nitrous oxide had been cracked at the operating temperature of the furnace releasing oxygen into the growth region. The structural perfection of the grown crystals was assessed by synchrotron based X-ray diffraction measurements and found to be extremely high, improving significantly with distance from the seed. Rocking curve widths, measured over a 4 mm × 7 mm area, as low as 20 arcsec were observed. No evidence was found for a reduction in crystalline quality resulting from the incorporation of oxygen. Luminescence studies (4–300 K) showed strong red luminescence at 680 nm persisting up to room temperature indicating that oxygen had been incorporated substitutionally onto tellurium sites. This material is highly transparent at the red emission wavelength with absorption coefficients of approximately 2 cm−1. Under alpha radiation from a 241Am source, scintillation was observed from the doped material with approximately 12,700 photons/MeV and a full width at half height maximum of 27%. The material is a potential candidate for large volume scintillation based radiation detectors.
机译:通过多管物理蒸气传输技术已经生长了厚达10毫米的碲化锌块状单晶,并在生长过程中就地掺杂了氧气。在异质外延成核和在100 mm直径的GaAs晶种晶圆上进行缓冲生长之后,通过一氧化二氮作为前驱物,通过新颖的气体注入系统将氧气引入石英生长包膜。来自残留气体分析仪的质谱对从生长包膜中排出的气体进行了采样,表明一氧化二氮在炉子的操作温度下已经裂解,从而将氧气释放到生长区域中。通过基于同步加速器的X射线衍射测量评估了生长晶体的结构完善性,发现其非常高,随着距种子距离的增加而显着提高。观察到在4mm×7mm范围内测得的摇摆曲线宽度低至20 arcsec。没有发现因掺入氧气导致结晶质量降低的证据。发光研究(4–300 K)显示,在680 nm处仍保持强红色发光,一直持续到室温,这表明氧已被取代地引入碲位点。该材料在红色发射波长下具有很高的透明性,吸收系数约为2 cm-1。在来自241Am光源的α辐射下,从掺杂材料中观察到闪烁,该闪烁材料具有约12,700个光子/ MeV,半峰全宽最大值为27%。该材料是基于大剂量闪烁的辐射探测器的潜在候选材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号